Design narrow-band frequency amplifier (1.5GHz -1.6GHz) based on InGaP Heterojunction Bipolar Transistor (HBT) and GaAs HBT. Journal of Engineering, [S. l.], v. 27, n. 2, p. 13–26, 2021. DOI: 10.31026/j.eng.2021.02.02. Disponível em: https://joe.uobaghdad.edu.iq/index.php/main/article/view/1275.. Acesso em: 11 may. 2024.