Design narrow-band frequency amplifier (1.5GHz -1.6GHz) based on InGaP Heterojunction Bipolar Transistor (HBT) and GaAs HBT

ABDO zouhair Ballouk; Fawaz Mofdi; Salem Ibrahim

doi:10.31026/j.eng.2021.02.02

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منشور: 2021-02-01

DOI: https://doi.org/10.31026/j.eng.2021.02.02

الكلمات المفتاحية:

Radio Amplifiers، PA، RF Drive Amplifiers، LNA، Low Noise Amplifier

ABDO zouhair Ballouk

Faculty of Mechanical and Electrical Engineering - Damascus University - Syria

Fawaz Mofdi

Faculty of Mechanical and Electrical Engineering - Damascus University - Syria

Salem Ibrahim

Higher Institute for Applied Sciences and Technology - Damascus - Syria

الملخص

The research aims to design a narrow-band frequency drive amplifier (1.5GHz -1.6GHz), which is used to boost the transmitter amplifier's input signal or amplify the GPS, GlONASS signals at the L1 band.

The Power Amplifier printed circuit board (PCB) prototype was designed using InGaP HBT homogeneous technology transistor and GaAs Heterojunction Bipolar Transistor (HBT) transistor. Two models have been compared; one of the models gave 16dB gain, and the other gave 23dB when using an input power signal (-15dBm). The PCB consumes 2.4W of power and has a physical dimension of 11 x 4 cm.

إصدار

مجلد 27 عدد 2 (2021): Journal of Engineering

القسم

Articles

كيفية الاقتباس

"Design narrow-band frequency amplifier (1.5GHz -1.6GHz) based on InGaP Heterojunction Bipolar Transistor (HBT) and GaAs HBT" (2021) مجلة الهندسة, 27(2), ص 13–26. doi:10.31026/j.eng.2021.02.02.

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